会议专题

An Experimental Method for Studying Young’s Modulus of Single Crystal Silicon at High Temperature

  This paper reports a novel indirect experimental method to measure Young’s modulus of single crystal silicon (SCS) at high temperature.The Young’s modulus at high temperature is estimated by measuring the elastic deformation of SCS microstructure at room temperature and high temperature,respectively.Since it’s difficult to measure the elastic deformation directly at high temperature,a novel indirect method is presented in this work.In order to prevent plastic deformation at high temperature,the Von Mises yield criterion is applied to predict the onset of plastic deformation.The resulting Young’s modulus of SCS is about 110±17GPa at 900℃ in the <100> direction from the present experiment.

single crystal silicon youngs modulus high temperature microstructure deformation

Shaokang Yao Dehui Xu Bin Xiong Yuelin Wang

Science and Technology on Micro-system Laboratory, State Key Laboratory of TransducerTechnology, Sha Science and Technology on Micro-system Laboratory, State Key Laboratory of TransducerTechnology, Sha

国际会议

中国微米纳米技术学会第14届学术年会、第3届国际年会暨第6届微米纳米技术“创新与产业化国际研讨与展览会(CSMNT2012 & ICMAN2012)

杭州

英文

1-5

2012-11-04(万方平台首次上网日期,不代表论文的发表时间)