The Oxygen Plasma Dry Release Process of the Membrane Bridge of RF MEMS Switches

摘要：

　　In this paper the oxygen plasma dry release process for membrane-bridge RF MEMS switches is studied and several methods are used to improve the dry release process.The residual PR (Photoresist) on the device substrate after different process time are observed and measured in this paper.The measured data shows that the residual PR exponentially reduces with etch time.It is found that the residual PR on the bottom surface of the membrane bridge is more than that on the substrate.The completely released RF MEMS switch using oxygen plasma dry etch process is obtained.

关键词： RF MEMS switch sacrificial layer dry release

作者: L.L.Jiang S.X.Jia J.Zhu

作者单位: Nanjing Electronic Device Institute, Nanjing, China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing, China

会议类型: 国际会议

会议名称: 中国微米纳米技术学会第14届学术年会、第3届国际年会暨第6届微米纳米技术“创新与产业化国际研讨与展览会(CSMNT2012 & ICMAN2012)

会议地点: 杭州

会议语种:英文

页码: 1-4

在线出版日期: 2012-11-04（万方平台首次上网日期，不代表论文的发表时间）