Study of High-temperature MEMS Pressure Sensor based on SiC-AlN Structure

摘要：

　　In the paper,a touch mode capacitive pressure sensor with double-notches structure is presented.The sensor employs a special SiC-AlN-SiC sandwich structure to achieve high-accuracy pressure measurement in hash environment such as high-temperature.The analysis to the relation of capacitance and external pressure of the sensor shows that the sensor has high sensitivity and long linear range simultaneously.In addition,the technical process of the sensor has been designed in detail in the paper.The research shows that the sensor packaged in a high-temperature ceramic AlN can withstand higher temperature.Consequently,the sensor can be applied in high-temperature and harsh environment.

关键词： High-temperature Pressure sensor SiC-AlN structure Technical process

作者: Hao Jie lv Tao Geng Guo Qing Hu

作者单位: School of Physics and Electronics, Henan University, Kaifeng, China Dept. of Mechanical and Electrical Engineering, Xiamen University, Xiamen, China

会议类型: 国际会议

会议名称: 中国微米纳米技术学会第14届学术年会、第3届国际年会暨第6届微米纳米技术“创新与产业化国际研讨与展览会(CSMNT2012 & ICMAN2012)

会议地点: 杭州

会议语种:英文

页码: 1-6

在线出版日期: 2012-11-04（万方平台首次上网日期，不代表论文的发表时间）