An Electrostatically Driven - Capacitively Sensed Silicon Resonator Based on SOI- MEMS Technology

摘要：

　　This paper presents the design,fabrication,ultra-small capacitance detection and tests of a novel electrostatically driven - capacitively sensed lateral silicon resonator based on SOI-MEMS technology.A new micro resonator structure is proposed,which has a key structure of a beam with two perforated structure stretching from the middle of the beam to each side.This design makes the resonator to be driven by smaller DC voltage bias than other designs with the same overlap area of electrode plates and gap between the two electrode plates.Its fabricated based on SOI wafer with very low resistivity device layer (0.001 to 0.002 ohm?cm),and the process is very simple with only 2 photo mask and 4 key processes.The test results show that the DC voltage bias can be less than 30V,the Vp-p of the AC sine drive voltage is 20mV,and the resonator’s Q-factor is more than 11800 with its resonant frequency 52261.99 Hz in vacuum (0.1-1 Pa).

关键词： MEMS resonator electrostatic drive capacitive sense SOI

作者: Hailong Jiao Deyong Chen Junbo Wang Jian Zhang Mingwei Cao

作者单位: State Key Laboratory of Transducer Technology, Institute of Electronics, Chinese Academy ofSciences, State Key Laboratory of Transducer Technology, Institute of Electronics, Chinese Academy ofSciences,

会议类型: 国际会议

会议名称: 中国微米纳米技术学会第14届学术年会、第3届国际年会暨第6届微米纳米技术“创新与产业化国际研讨与展览会(CSMNT2012 & ICMAN2012)

会议地点: 杭州

会议语种:英文

页码: 1-5

在线出版日期: 2012-11-04（万方平台首次上网日期，不代表论文的发表时间）