Properties of RF-sputtered PZT thin films with Ti/Pt electrodes

摘要：

　　Pb(Zr0.53Ti0.47)O(3) thin film was deposited via rf-magnetron sputtering technique onto Pt/Ti/SiO2/Si substrate.AFM results showed that average grain sizes of PZT thin films were 60nm~90nm and their average roughness was less than 2nm.According to X-ray diffraction analysis,the preferred orientation of PZT thin film was different as annealing temperature changed and complete perovskite phase of PZT thin film was obtained at 700℃.Average residual stress in the thin film was estimated according to the optimized Stoney formula,experimental results showed that thermal mismatch was the decisive factor of residual stress in Pt/Ti/SiO2/Si substrate,the residual stress in PZT thin film decreased as their thickness increased.The dielectric constant and loss angle tangent were extremely increased with the thickness of PZT thin films.

关键词： Pb(Zr0.53Ti0.47)O(3) thin films rf-sputtering residual stress electric properties

作者: Yan Cui Fei Wang Minglei Yao Liding Wang

作者单位: Key Laboratory for Micro/Nano Technology and System of Liao-Ning Province, No.2 LinggongRoad Ganjingzi District, Dalian, China

会议类型: 国际会议

会议名称: 中国微米纳米技术学会第14届学术年会、第3届国际年会暨第6届微米纳米技术“创新与产业化国际研讨与展览会(CSMNT2012 & ICMAN2012)

会议地点: 杭州

会议语种:英文

页码: 1-6

在线出版日期: 2012-11-04（万方平台首次上网日期，不代表论文的发表时间）