A study of influences of crystallization temperature and slurry concentration on stress of PZT thick film prepared by a modified sol-gel method

摘要：

　　As a key MEMS transducer materials,PbZr0.52Ti0.48O3(PZT) piezoelectric thick film should have good piezoelectric properties as well as lower stress.But now few studies on PZT film stress were carried out.The PZT thick films are deposited by a modified sol-gel method,and the influences of crystallization temperature and slurry concentration on stress are investigated in this paper.The result shows that the PZT thick film stress is tensile stress about 100-1000Mpa.With crystallization temperature increasing,thermal stress increases gradually.The stress increases about 3.5 times as the crystallization temperature rises from 600℃ to 700℃.With powder concentration of slurry increasing,the stress of PZT thick film becomes smaller.The stress decreases about 7 times as powder concentration of slurry increasing from 1:4.5 to 1:3.5.The relationship between stress of PZT thick films and crystallization temperature is simulated by using the finite element method,and the results of simulation agree well with the experimental results.

关键词： PZT thick films stress slurry concentration crystallization temperature finite element method

作者: Wei Ren Xiuchen Zhao Junhong Li

作者单位: Acoustical MEMS Laboratory, Institute of Acoustics Chinese Academy of Sciences, Beijing 100190,China School of Material Science and Engineering, Beijing Institute of Technology, Beijing 100081, China Acoustical MEMS Laboratory, Institute of Acoustics Chinese Academy of Sciences, Beijing 100190,China

会议类型: 国际会议

会议名称: 中国微米纳米技术学会第14届学术年会、第3届国际年会暨第6届微米纳米技术“创新与产业化国际研讨与展览会(CSMNT2012 & ICMAN2012)

会议地点: 杭州

会议语种:英文

页码: 1-6

在线出版日期: 2012-11-04（万方平台首次上网日期，不代表论文的发表时间）