The fabrication of silicon nano pin with CsCl nano islands and dry etching for field emission
Silicon nano pin arrays with heights of 1.3-3.66um and diameter of 315-899nm,are fabricated by CsCl self-assemble for CsCl nano islands for mask and ICP etching for silicon pins.CsCl film is firstly deposited on the wafer by thermal evaporation and putted in the humid controlled environment to be developed to the CsCl islands with diameter of 341-915nm as self-assembled technology.Then the ICP etching with SF6,CCl4,He gas is introduced to make the silicon nano pin by the mask of CsCl nano islands,and the silicon nano pins with the different height of 1.3-3.66 um are finished for field emission.The gated FEA templates are fabricated by photolithography process and the lift-off technology with Ti-Si film as the gate electrodes.The final template for field emission has the silicon nano pins with diameters of 31.7 nm on top,Ti-Ag film with thickness of 105nm and gate holes of 30um in diameter,and SU8 resist insulator structure with thickness of 4um and holes of 10um in diameter.The optimization of the fabrication process and the performance for the configuration will be made.
silicon nano pin cesium chloride self-assembly dry etching lithographic
Marina Ashmkhan Jing Liu Bo Wang Futing Yi
Institute of High Energy Physics of Chinese Academy of Science, Beijing, China;Graduate University o Institute of High Energy Physics of Chinese Academy of Science, Beijing, China
国际会议
中国微米纳米技术学会第14届学术年会、第3届国际年会暨第6届微米纳米技术“创新与产业化国际研讨与展览会(CSMNT2012 & ICMAN2012)
杭州
英文
1-5
2012-11-04（万方平台首次上网日期，不代表论文的发表时间）