Investigations of Copper Electrodeposition for High Aspect Ratio TSVs

摘要：

　　Through Silicon Vias (TSVs) are vertical electrical connections passing completely through a silicon wafer or die.They form high density interconnects between stacked devices on wafer level and deliver good electrical performance at the smallest form factor for 3D architectures.In this work we developed a copper electrodeposition process for creating high aspect-ratio (5∶1) TSVs.The process produces defect-free via fillings,which are key to the successful implementation of high quality and high reliability 3D interconnections.This paper discusses the key aspects of the electrodeposition process and a number of optimization approaches.

关键词： 3D integration TSV copper electrodeposition

作者: Ai-Bo Wang Jin Tao Chong Zhou Bei Yao Hao Zhang

作者单位: College of Precision Instrument and Opto-Electronics Engineering, Tianjin University, Tianjin, China National Key Laboratory of Precision Measuring Technology & Instruments, Tianjin University, Tianjin

会议类型: 国际会议

会议名称: 第16届机电一体化技术国际会议

会议地点: 天津

会议语种:英文

页码: 35-38

在线出版日期: 2012-10-16（万方平台首次上网日期，不代表论文的发表时间）