Thermoelectric Properties of Al Doped Zno Thin Films

摘要：

　　Significant progress has been made in thermoelectric materials during the last decades and it is found that thermoelectric thin film materials have high thermoelectric conversion efficiency.ZnO based thermoelectric materials,such as ZnO:Al (AZO),are considered as the most promising oxide materials for high-temperature,nontoxic and low-cost thermoelectric application.In this work,the effects of annealing temperature on the thermoelectric properties of AZO thin films prepared by direct current magnetron sputtering were investigated.The results indicate that the Seebeck coefficient of AZO thin films increases and the resistivity decreases as increasing of annealing temperature.Among the prepared AZO films in this work,the maximum absolute value of Seebeck coefficient is 460 μV/K and the minimum resistivity is 3.25×10-4 Ω·m.The sample annealed at 773 K has a maximum power factor value of 1.46×10-4 W/mK2 at 620 K with a moderate Seebeck coefficient of -355 μV/K and a electrical conductivity of 1.16×103 S/m.

关键词： lon beam sputtering Sb2Te3 thin films Thermoelectric material Heat treatment

作者: Zhuanghao Zheng Ping Fan Guangxing Liang Pengjuan Liu Pengju Cao Dongping Zhang Zhaokun Cai Xuan Ou Cuiyuan Lai

作者单位: College of Physical Science and Technology, Shenzhen University, 518060, China Shenzhen key laboratory of sensor technology, Shenzhen University, 518060, China

会议类型: 国际会议

会议名称: the Chinese Materials Congress 2012(2012年中国材料大会(CMC2012))

会议地点: 太原

会议语种:英文

页码: 138-143

在线出版日期: 2012-07-13（万方平台首次上网日期，不代表论文的发表时间）