Recent Developments of ZnO-Based p-type Transparent Conductive Oxide Thin Films
Nowadays,high performance p-type transparent conductive oxide (TCO) thin films have gained tremendous intersts,and the fact is that if p-type TCOs with high electrical conductivity and optical transmittance can be fabricated,transparent p-n junctions can be obtained and “invisible electronics be realized,and hence the use area of TCOs will be highly broadened.A lot of work have been done on non-stoichiometric and doped versions of p-type TCOs in the last few years to improve the optical and electrical properties by various deposition techniques.ZnO-based thin films were thought to be the most promising candidate for p-type TCOs based on the fact that ZnO has advantages over the others,so in this paper the development of ZnO-based p-type TCOs has been discussed.Firstly,the reasons why p-type ZnO-based TCOs are difficult to synthesize were discussed,and then the general ways now used to produce p-type ZnO-based TCOs were summerized,including intrinsic p-type ZnO,doping of groupⅠelements,codoping of Ⅴand Ⅲ elements,doping of group Ⅴ elements,the origin of p-type conductivity and the feasibility of each way,and the state-of-the-art optical and electrical properties were presented.Finally,the specific shortcomings in producing high quality p-type TCOs were discussed.Based on the comparision,it is believed that the doping of group Ⅰelements in ZnO may be the most pronising way in realizing p-type TCO.
P-type TCO ZnO-based thin films Fabrication developments
Ming Wang Xungang Diao Tingting Guo Xuan Wang
School of Physics and Nuclear Energy Engineering, Beihang University, Beijing, 100191, China
国际会议
the Chinese Materials Congress 2012(2012年中国材料大会(CMC2012))
太原
英文
878-885
2012-07-13（万方平台首次上网日期，不代表论文的发表时间）