Purification of Multicrystalline Silicon by Cold Crucible Directional Solidification and Impurity Distribution

摘要：

　　In order to get solar grade silicon,large cold crucible has been used in an induction heat furnace.By controlling the relative location of the crucible and coils,directional solidification was realized.More than 200 kg multi-crystalline silicon ingot was produced in a batch with short work time.The removal rate of most metal impurities was high,typically higher than 99% for transition metals like iron.Non-metallic elements such as boron and phosphorus could not be removed efficiently because of larger equilibrium segregation coefficient.The concentration of phosphorus was one third of the feedstock due to the vaporization in the melting process.The distribution of impurities agreed with the solidification principle.Quartzes and carbon was not used,which ensured silicon prevent from the contamination.Cooperated with other methods,large scale of solar grade silicon was produced.

关键词： Cold crucible Directional solidification Solar grade silicon Impurity distribution

作者: Tong Liu Youwen Zhao Zhiyuan Dong Teng Chen Jun Wang Hui Xie

作者单位: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 10083, China

会议类型: 国际会议

会议名称: the Chinese Materials Congress 2012(2012年中国材料大会(CMC2012))

会议地点: 太原

会议语种:英文

页码: 886-891

在线出版日期: 2012-07-13（万方平台首次上网日期，不代表论文的发表时间）