Microstructure Characterization of Si/C Multilayer Thin Films
(0) Si/C multilayer thin films were prepared by magnetron sputtering and post-annealing in N2 atmosphere at 1100℃ for 1h.X-ray diffraction (XRD),Raman scattering and high-resolution transmission electron microscopy (HRTEM) were applied to study the microstructures of the thin films.For the case of Si/C modulation ratio smaller than 1,interlayer diffusion is evident,which promotes the formation of α-SiC during thermal annealing.If the modulation ratio is larger than 1,the Si sublayers are partially crystallized,and the thicker the Si sublayers are,the crystallinity increases.To be excited,brick-shaped nc-Si is directly observed by HRTEM.The brick-shaped nc-Si appears to be more regular near the Si (100) substrate but with twin defects.The results are instructive in the application of solar cells.
Si/C mutilayer Modulation ratio Microstructure Magnetron sputtering Solar cell
Ting Han Gengrong Chang Yunjin Sun Fei Ma Kewei Xu
State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineeri Department of Physics and Opt-electronic Engineering, Xi’an University of Arts and Science, Xi’an 71 State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineeri
国际会议
the Chinese Materials Congress 2012(2012年中国材料大会(CMC2012))
太原
英文
910-914
2012-07-13（万方平台首次上网日期，不代表论文的发表时间）