Ion-beam Sputtering Deposited Cu-doped CdS Thin Film
Cu-doped CdS thin film has been successfully deposited by ion-beam sputtering deposition.The structural,morphology,optical and electrical properties of as-deposited and annealed Cu-doped CdS thin films were investigated.The heavily Cu-doped CdS films annealed at 400 ℃ was demonstrated to be improved in structural,morphology,electrical and optical properties.X-ray diffraction (XRD) analysis indicated the formation of polycrystalline CdS film with the structure of hexagonal wurtzite phase.No distinct impurity of Cu and Cu-S phase was detected in Cu-doped CdS thin films.Atomic force microscopy (AFM) revealed that the grain size was increased after annealed.Optical transmission and absorption spectroscopy measurement revealed a high absorption and energy band gap was of about 2.40 eV.The CdS thin film was of p-type conductivity and the resistivity was found to be 1.28×10-1 Ωcm.
CdS thin film Ion beam sputtering X-ray diffraction Microstructure
Guangxing Liang Ping Fan Pengju Cao Zhuanghao Zheng
Institute of Thin Film Physics and Application, Shenzhen University, 518060, China;ShenzhenKey Labor Institute of Thin Film Physics and Application, Shenzhen University, 518060, China
国际会议
the Chinese Materials Congress 2012(2012年中国材料大会(CMC2012))
太原
英文
915-919
2012-07-13（万方平台首次上网日期，不代表论文的发表时间）