The influence of C/CHX ion implantation on the chemical bond structure of PTFE surface
Polytetrafluoroethene (PTFE) surface was implanted by C/CHx ion beam generated by microwave discharge plasma with pure CH4 or the mixture of CH4/H2 as the working gas and 10 kV in accelerate voltage. During the implantation, C-F bonds were broken by the C/CHx (x<4) ions with high energy. Then C/CHx ions reacted with the PTFE surface and the composition and chemical bond structure of PTFE surface was changed from C-F to C-C as the main structure, obviously. By this way, carbon films could be deposited onto polymer or soft material surface with strong adhesion. The implantation depth was over than 15 nm. Because of the introduction of C/CHx ions onto PTFE surface, the average C/F atom ratio for PTFE before and after the implantation increased from 1:1.6 and 1.7:1.
PTFE ion implantation XPS chemical bond structure
Wanyu Ding Dongying Jua Tsunoda Susumu Sato
Advanced Science Research Laboratody, Saitama Institute of Technology, Fusaiji, Fukava, Saitama 369- Advanced Science Research Laboratody, Saitama Institute of Technology, Fusaiji, Fukava, Saitama 369- ARIOS INC.,2-20, Musashino 3Chome, Akisima, Tokyo 196-0021, Japan
国际会议
北京
英文
752-755
2012-10-23（万方平台首次上网日期，不代表论文的发表时间）