Process Optimization The Growth of GaP Epitaxial Layer on 2° GaAs Substrate

摘要：

GaP epitaxial layer was prepared by planetary MOVCD on 2°GaAs substrate. Use the XRD (X-ray diffraction) to test the full width at half maximum (FWHM) of rocking-curve and use the high power microscope to watch the crystal surface quality. Summary the growth condition of high-quality GaP epitaxial layer. The results show that the surface quality depends on high growth temperature and slow growth velocity. Perfect surface was obtained when the thickness that grow GaP epitaxial layer in low temperature and slow velocity is 20nm.

关键词： MOCVD GaP XRD 2° GaAs

作者: Qinfei Ni Zhongyang Qiu Bin Yu Xuezhen Liu Tiancheng Zhang Yuxia Wang

作者单位: State Key Lab of High Power Semiconductor LaserChangchun University of Science and TechnologyChangch State Key Lab of High Power Semiconductor Laser Changchun University of Science and Technology Chang

会议类型: 国际会议

会议名称: 2012 International Conference on Optoelectronics and Microelectronics(2012光电子与微电子国际学术会议 2012 ICOM)

会议地点: 长春

会议语种:英文

页码: 1-4

在线出版日期: 2012-08-23（万方平台首次上网日期，不代表论文的发表时间）