Effect of antimony ambience on the interfacial misfit dislocations array in a GaSb epilayer grown on a GaAs substrate by MOCVD
The crystal quality and structural properties of GaSb thin films grown on a semi-insulator GaAs (001) substrate by metalorganic chemical vapor deposition (MOCVD) using triethylgallium and trimethylantimony were characterized by high-resolution X-ray diffraction and high-resolution transmission electron microscopy. The nucleation of the interfacial misfit dislocations (IMF) array in the GaSb/GaAs interface, which is dependent on the antimony ambience, was investigated by varying the V/III ratio. Our experiment results showed that the IMF array and threading dislocation density are modified in the GaSb epilayer with different antimony ambiences. The GaSb thin film grown by the IMF mode on GaAs was confirmed under our optimal growth condition, and the hole density and mobility of GaSb thin films were found to be 5.27 × 10l6 cm-3 (1.20 × 10l6) and 553 cm2/V-s (2340) at RT (77 K) from Hall measurements. We suggest that the IMF growth mode can also be applied to fabricate the GaSb film on GaAs by MOCVD for application in microelectronic devices.
MOCVD IMF GaSb hole density and mobility
Jie Wu Shaobin Liu Wei zhou Wu Tang Kei. May. Lau
University of electronic Science and Technology of China,No. 4 The Second Block, North Road,Chengdu Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
国际会议
2012 International Conference on Optoelectronics and Microelectronics(2012光电子与微电子国际学术会议 2012 ICOM)
长春
英文
5-9
2012-08-23（万方平台首次上网日期，不代表论文的发表时间）