Dependence of optical constants of a-GaAsN films on sputtering pressure

摘要：

Amorphous GaAsN (a-GaAsN) films have been deposited at room temperature by reactive magnetron sputtering on glass substrates at different sputtering pressure. The deposition rate decreased as the sputtering pressure increased. Transmittance and reflectance of the as-deposited films were obtained by spectrophotometric measurement. The sputtering pressure influence on the optical band gap (Eg), refractive index （n）, the dispersion parameters (Eo, Ed) have been investigated. An analysis of the absorption coefficient revealed a direct optical transition characterizing the as-deposited films. The refraction index dispersion of the as-deposited a-GaAsN films fitted well to the Cauchy dispersion relation and Wemple’s model.

关键词： component a-GaAsN thin films Sputtering deposition Optical constants

作者: Baoshan Jia Yuhua Wang Lu Zhou Duanyuan Bai Zhongliang Qiao Xin Gao Baoxue Bo

作者单位: National Key Laboratory of High Power Semiconductor LasersChangchun University of Science and Techno National Key Laboratory of High Power Semiconductor Lasers Changchun University of Science and Techn

会议类型: 国际会议

会议名称: 2012 International Conference on Optoelectronics and Microelectronics(2012光电子与微电子国际学术会议 2012 ICOM)

会议地点: 长春

会议语种:英文

页码: 10-12

在线出版日期: 2012-08-23（万方平台首次上网日期，不代表论文的发表时间）