Influence of N incorporation on the carrier concentration of sputtering-deposited a-GaAs1-xNx thin films

摘要：

This work reported the changes in the carrier concentration of a-GaAs1-xNx thin films with different x value. The films were deposited by reactive magnetron sputtering at different sputtering pressure. The N content in the film increases by increasing the sputtering pressures. The free carrier concentration is increased as the N content increased.

关键词： a-GaAsN thin films sputtering deposition carrier concentration Introduction

作者: Baoshan Jia Lu Zhou Yuhua Wang Duanyuan Bai Zhongliang Qiao Xin Gao Baoxue Bo

作者单位: State Key Laboratory of High-Power Semiconductor LaserChangchun University of Science and Technology State Key Laboratory of High-Power Semiconductor Laser Changchun University of Science and Technolog

会议类型: 国际会议

会议名称: 2012 International Conference on Optoelectronics and Microelectronics(2012光电子与微电子国际学术会议 2012 ICOM)

会议地点: 长春

会议语种:英文

页码: 13-15

在线出版日期: 2012-08-23（万方平台首次上网日期，不代表论文的发表时间）