The Effect of Argon Plasma Cleaning on the Surface Characteristics of GaAs Substrate

摘要：

In this paper, GaAs substrate samples were treated by different Ar ion plasma cleaning process, and then a SiO2 passivation layer was deposited by radio frequency magnetron sputtering to avoid reoxidation or recontamination of the surface. Morphology, composition and fluorescence properties of GaAs substrate surface were investigated respectively by scanning electron microscope, energy dispersive X-ray spectrometer and rapid photoluminescence mapper. The results showed that GaAs samples treated under the condition of sputtering power 8W, chamber pressure 4.7Pa, Ar flow rate 40sccm and cleaning time 48min are free from damage, the oxygen and carbon content on the sample surface decreased obviously. Photoluminescence (PL) intensity increased by 66.73 ％.

关键词： GaAs surface Ar ion plasma cleaning fluorescence properties

作者: Yunhua Wang Lu Zhou Baoshan Jia Duanyuan Bai Xu Yang Xin Gao Baoxue Bo

作者单位: National Key Lab of High Power Semiconductor Lasers, Changchun University of Science and Technology, National Key Lab of High Power Semiconductor Lasers, Changchun University of Science and Technology,

会议类型: 国际会议

会议名称: 2012 International Conference on Optoelectronics and Microelectronics(2012光电子与微电子国际学术会议 2012 ICOM)

会议地点: 长春

会议语种:英文

页码: 16-20

在线出版日期: 2012-08-23（万方平台首次上网日期，不代表论文的发表时间）