Study on the Properties of Gallium Antimonide Surface Passivatied with S2Cl2 Solution

摘要：

The surface optical and chemical properties of gallium antimonide (GaSb) surfaces after dichloride disulfide (S2Cl2) and ammonium sulfide ((NH4)2S) treatments were compared. Photoluminescence (PL) spectroscopy is used to study the GaSb surfaces passivated by S2Cl2 comparing to (NH4)2S solution, meanwhile , quantitative comparison using x-ray photoelectron spectroscopy (XPS) demonstrates that S2Cl2 passivation dramatically improves the stability against reoxidation in air compared with the (NH4)2S solution. We found that S2Cl2 method is quite effective for removing oxides of GaSb surface, besides, PL intensity of S2Cl2-passivated sample was higher than (NH4)2Spassivated sample, and stability of S2Cl2-passivated sample was also more sustained. Overall, S2Cl2 provides to be superior passivation for III-V compound semiconductor material promising for high-speed and optoelectronic device applications.

关键词： photoluminescence GaSb surface S2Cl2-passivated (NH4)2S solution

作者: Fang Chen Guojun Liu Zhipeng Wei Rui Deng Xuan Fang Shanshan Tian Yonggang Zou Mei Li Xiaohui

作者单位: National Key Laboratory of High-Power Semiconductor Lasers, Changchun University of Science and Technology

会议类型: 国际会议

会议名称: 2012 International Conference on Optoelectronics and Microelectronics(2012光电子与微电子国际学术会议 2012 ICOM)

会议地点: 长春

会议语种:英文

页码: 21-24

在线出版日期: 2012-08-23（万方平台首次上网日期，不代表论文的发表时间）