Study on Neutral Sulphur Passivation of Gallium Antimonide Surface
We here report a new passivation method, with neutral sulphur, (NH4)2S, to modify the GaSb surface. The optical and chemical properties of GaSb surface before and after neutral passivation are investigated using x-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) mapping. Neutral (NH4)2S passivation led to 20 times enhancement in photoluminescence (PL) intensity, lower oxide content, and a less amount of elemental Sb than the untreated sample. The passivtion effect results from the significant reduction in surface states due to the formation of Ga and Sb sulfide species. Compared to the regular alkaline (NH4)2S treatment, surface passivation intensity and homogeneity are both improved. Our studies also indicate the neutral sulphur passivation treated surface is much more stable in air for at least 48h.
Key word-GaSb surface passivation neutral (NH4)2S XPS PL
Ning An Guojun Liu Zhipeng Wei Rui Deng Xuan Fang Xian Gao Yonggang Zou Mei Li Xiaohui Ma
National Key Laboratory of High Power Semiconductor LasersChangchun University of Science and Technology
国际会议
2012 International Conference on Optoelectronics and Microelectronics(2012光电子与微电子国际学术会议 2012 ICOM)
长春
英文
25-29
2012-08-23（万方平台首次上网日期，不代表论文的发表时间）