The enhanced optical property of chemical passivated n type GaSb

摘要：

-- In the paper, Te-doped n type GaSb was passivated by (NH4)2S, the optical and surface properties of passivated GaSb were investigated by PL and AFM. After passivation treatment, the luminescence intensity of GaSb was enhanced. The passivation time would also affect luminescence intensity and the surface smooth of GaSb.

关键词： n-GaSb photoluminescence sulfuration passivation

作者: Bo Wang Xiaohui Ma Zhipengwei Mei Li Xuan Fang Rui Deng Xian Gao Yonggang Zou Peng Lu Guojun Liu

作者单位: National Key Laboratory of High-Power Semiconductor Lasers, Changchun University of Science and Technology

会议类型: 国际会议

会议名称: 2012 International Conference on Optoelectronics and Microelectronics(2012光电子与微电子国际学术会议 2012 ICOM)

会议地点: 长春

会议语种:英文

页码: 30-34

在线出版日期: 2012-08-23（万方平台首次上网日期，不代表论文的发表时间）