The effect of annealing temperature on electrical properties of Au/n-GaSb Schottky contacts

摘要：

Au film (200nm) is deposited on Te doped n-GaSb grown to form metal/ semiconductor contacts, and these contacts are quickly annealed at 200 ℃-400 ℃ in the ambient gas of N2. It is found that these contacts show rectifying Schottky behavior by I-V measurement. The characteristic of the contact is improved when annealed under the appropriate temperature. It leaded to increase the barrier height and reduce both the ideality factor and the leakage current.

关键词： Key word-schottky barrier, annealing temperature, electric character

作者: Xiaoxuan Liu Xiaohui Ma Yongfeng Li Zhipeng Wei Xuan Fang Xueying Chu Yong Wang Quansheng Liu Yonggang Zou Mei Li Guojun Liu

作者单位: Changchun University of Science and TechnologyChangchun, China Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education) College of P

会议类型: 国际会议

会议名称: 2012 International Conference on Optoelectronics and Microelectronics(2012光电子与微电子国际学术会议 2012 ICOM)

会议地点: 长春

会议语种:英文

页码: 35-37

在线出版日期: 2012-08-23（万方平台首次上网日期，不代表论文的发表时间）