Influence of PH3 flow distribution on the growth of AlInP/GaInP distributed Bragg-reflector

摘要：

AlInP/GaInP distributed Bragg-reflector (DBRs) were prepared by MOCVD. Influences of the flow velocity and rate of mixed gas on homogeneity of epitaxial film were investigated systematically. Compared with the change of single group V source, the uniformity of AlInP/GaInP layers was significantly improved by changing simultaneously the distribution of upper and lower nozzle group in the fixed V/III ratio.

关键词： MOCVD PH3 flow distribution flow velocity uniformity

作者: Yu Tian Wei Zhao Qingxue Sui Zhimin Zhang Li Xu Xiaohui Ma Zhipeng Wei Zhiwei Xue Ziyue Ma Xiaoya Han Shuangxiang Zhang Yinqiao Zhang

作者单位: State Key Laboratory on High-Power SemiconductorLasers, Changchun University of Science and Technolo The Changchun Regional Office of the Armored ForcesRepresentative Bureau, the Equipment Headquarters The Changchun Regional Office of the Armored Forces Representative Bureau, the Equipment Headquarter Changelight Co., Ltd

会议类型: 国际会议

会议名称: 2012 International Conference on Optoelectronics and Microelectronics(2012光电子与微电子国际学术会议 2012 ICOM)

会议地点: 长春

会议语种:英文

页码: 41-44

在线出版日期: 2012-08-23（万方平台首次上网日期，不代表论文的发表时间）