Research on Rapid Thermal Annealing of Ohmic Contact to GaAs

摘要：

Abstract.In order to increase heat disperation and improve power and reliability of GaAs-based semiconductor lasers, the rapid thermal annealing (RTA) of ohmic contact to GaAs were optimized. The ohmic contact multi-layer metals of Ni/AuGe/Ni/Au on n-GaAs and Ti/Pt/Au on p-GaAs at annealling temperature of 380~460∩ and annealing duration of 40s~80s were calibrated. The rectangular transmission line model (RTLM) were adopted to calculate the specific contact resistance. For n-GaAs ohmic contact, the optimized contact resistivity is 2.76】10-6 з·cm2 at annealing temperature of 420 ∩ for 60s. Under the same annealling conditions for p-GaAs, the contact resistivity is 3.91】10-5 з·cm2. The 808nm laser diode with double-side light output using the optimized RTA conditions, the maximum output power is more than 3W at operationg current of 4A.

关键词： ohmic contact rapid thermal annealing GaAs

作者: Yinghong Wang Yong Wang Lujie Li Yuanhong Zhao GuoQing Feng Xiaohua Wang

作者单位: National Key Laboratory on High Power Semiconductor Lasers, Changchun University of Science and Technology,Changchun 130022,China

会议类型: 国际会议

会议名称: 2012 International Conference on Optoelectronics and Microelectronics(2012光电子与微电子国际学术会议 2012 ICOM)

会议地点: 长春

会议语种:英文

页码: 61-63

在线出版日期: 2012-08-23（万方平台首次上网日期，不代表论文的发表时间）