Thermal characteristic analysis of new structure in 850nm VCSEL

摘要：

The traditional annular electrode structure vertical cavity surface emitting semiconductor lasers (VCESL), the operating current injected into the active region is only in the very narrow channel of the annular edge of the area, make the distribution of the device internal thermal field uneven, affecting the output characteristic of the device. In this paper, present a new type of petaline electrode structure, form a number of independent emitting hole, making the device internal thermal field even, output characteristic of the device is improved remarkably. Active region is GaAs/Al0.3Ga0.7As three quantum well structure growing by molecular beam epitaxy (MBE), using the gradual change structure of AlGaAs as DBR. Prepare annular electrode and petaline electrode with the same process in the same epitaxial wafer. At the same time, analyzed internal thermal field distribution of this two kinds of different electrode structure by ANSYS finite element thermal analysis software. Through the analysis and calculation, we know, the Rthjc of new petaline electrode structure is 3.78℃/W, the Rthjc of traditional annular electrode structure is 4.78℃/W, thermal characteristic and stability of new petaline electrode structure are better than traditional annular electrode structure obviously.

关键词： vertical cavity surface emitting semiconductor lasers annular electrode Petaline electrode thermal characteristic

作者: Donghan Wei Shuang Du Ting Gao Yong Pang Bo Zhao Hui Li Yi Qu

作者单位: National Key Laboratory on High Power Semiconductor Laser, Changchun University of Science and Technology Changchun, Jilin 130022, China

会议类型: 国际会议

会议名称: 2012 International Conference on Optoelectronics and Microelectronics(2012光电子与微电子国际学术会议 2012 ICOM)

会议地点: 长春

会议语种:英文

页码: 64-67

在线出版日期: 2012-08-23（万方平台首次上网日期，不代表论文的发表时间）