Coupled Distributed Bragg Reflector for high brightness red light-emitting diodes

摘要：

AlGaInP LEDs with Coupled distributed bragg reflectors were grown by Metal-organic Chemical Vapor Deposition (MOCVD). The results showed that the peak wavelength of this structure LED was 625nm, and normal luminous intensity was increased to 164mcd on injection current 20mA from the LED with coupled DBR structure.

关键词： AlGaInP LED coupled distributed bragg reflector MOCVD

作者: Yu Tian Zhimin Zhang Li Xu Zhiwei Xue Zhipeng Wei Fei Yu Zou Yonggang Xiaohui Ma Wei Zhao Qingxue Sui

作者单位: National Key Laboratory on High-Power SemiconductorLasers, Changchun University of Science and Techn The Changchun Regional Office of the Armored Forces Representative Bureau, the Equipment Headquarter

会议类型: 国际会议

会议名称: 2012 International Conference on Optoelectronics and Microelectronics(2012光电子与微电子国际学术会议 2012 ICOM)

会议地点: 长春

会议语种:英文

页码: 102-104

在线出版日期: 2012-08-23（万方平台首次上网日期，不代表论文的发表时间）