Progress on the GaN-based LEDs and LDs

摘要：

The GaN-based light emitting diodes (LEDs) and laser diodes (LDs) have extensive applications in LED display, high brightness illumination, traffic signals, streetlights, automotive for LEDs, and high density optical storage, full-color display, laser printing, and laser lighting for LDs. The progress of the GaNbased LEDs and LDs is introduced. There are many universities and companies focusing on their research on the GaN LEDs and LDs, and the great breakthroughs have been achieved in the GaN material, process techniques, growth on non-polar and semi-polar substrates, and high extraction efficiency for LEDs. But there are still some challenges for the commercial applications such as selection of the appropriate substrates, quantum confined Stark effect (QCSE), and catastrophic optical damage (COD) for LDs. And the possible solutions are proposed in order to eliminate or decrease the difficulties.

关键词： GaN LED LD

作者: Yong Wang Yonggang Zou Xiaohui Ma Naisen Yu Dongmei Deng Kei May Lau

作者单位: National Key Laboratoryon High Power Semiconductor Lasers,Changchun University of Science and Techno Photonics Technology Center, Electronic and Computer Engineering, Hong Kong University of Science an

会议类型: 国际会议

会议名称: 2012 International Conference on Optoelectronics and Microelectronics(2012光电子与微电子国际学术会议 2012 ICOM)

会议地点: 长春

会议语种:英文

页码: 105-110

在线出版日期: 2012-08-23（万方平台首次上网日期，不代表论文的发表时间）