1.47 μm High Characteristic Temperature InGaAsP/InP MQW Laser

摘要：

LASTIP software was applied to simulate symmetric and asymmetric InGaAsP/InP multi-quantum-well (MQW) laser diodes (LDs) emitting at about 1.47 μm. In order to obtain the laser with high-temperature characteristic, the tunnel layer and inner cladding layer was inserted in the laser structure. By comparing the two structures, we found that the tunnel injection (TI) structure can effectively reduce hot carrier effects, the TI asymmetric SCH MQW lasers have good temperature characteristics and smaller threshold current.

关键词： 1.47 μm InGaAsP/InP TI asymmetric SCH MQW High Characteristic Temperature

作者: Weibo Chen Lin Li Jinlong Zhao Yong Wang Te Li Peng Lu Mei Li GuoJun Liu

作者单位: Weibo Chen, Lin Li, Jinlong Zhao, Yong Wang, Te Li, Peng Lu, Mei Li, GuoJun Liu National Key Lab of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, China

会议类型: 国际会议

会议名称: 2012 International Conference on Optoelectronics and Microelectronics(2012光电子与微电子国际学术会议 2012 ICOM)

会议地点: 长春

会议语种:英文

页码: 115-118

在线出版日期: 2012-08-23（万方平台首次上网日期，不代表论文的发表时间）