会议专题

High power asymmetric 980nm broad-waveguide diode lasers with current blocking layer

To avoid the catastrophic optical mirror damage (COMD), the value of equivalent transverse spot size has increased to 0.83 m through decreasing optical confinement factor ( ) for quantum well diode lasers, which further reduces the power density on the facet. The design of asymmetric 980 nm InGaAs/InGaAsP broad-waveguide diode lasers with current blocking layer is designed for high-power, single-transversemode operation experimentally, which prevents carrier leakage and increases electro-optical conversion efficiency. According to the calculation result, for the device with uncoated 100- m-wide stripes, 2-mm-long lasers exhibit a threshold-current density of 290A/cm2, the maximum output power is 1.19W with operating current of 2.0 A. The corresponding internal loss coefficient and differential quantum efficiency are 1.6 cm-1 and 63% respectively.

laser diode high power asymmetric broad waveguide current blocking layer equivalent transverse spot size

Yuzhi Wang Te Li Rong Chen Yue Zhang Guojun Liu Erjuan Hao

National Key Lab on High Power Semiconductor Lasers,Changchun University of Science and Technology,C Heping Campus of Jilin University, Changchun, Jilin, China. 130062

国际会议

2012 International Conference on Optoelectronics and Microelectronics(2012光电子与微电子国际学术会议 2012 ICOM)

长春

英文

123-127

2012-08-23(万方平台首次上网日期,不代表论文的发表时间)