Investigation of Refractive Index Antiguiding Structure for Asymmetric Heterostructure Semiconductor Laser

摘要：

Anti-guiding layers of asymmetric hetreostructure for 100μm-wide-strip GaAs/AlGaAs quantum-well semiconductor lasers emitting at a wavelength of 808 nm are analyzed and calculated theoretically. Choosing three cases of Al-content of antiguiding layer in the active region containing quantum well (QW) and waveguides, we calculate and analyze the dependences of optical confinement factor, threshold current, maximal output power and vertical beam divergence angle on the thickness of the antiguiding layer, separately. According to the results, when the thickness of antiguiding layer is constant, the higher the Al-content is the greater on performance of device is; when the Al-content in antiguiding layer is constant, the effect on performance of device enlarged with the increase of thickness of antiguiding layer.

关键词： antiguing structure asymmetric heterostructure high power 808nm laser

作者: Yue Zhang Te Li Rong Chen Yuzhi Wang Guojun Liu Erjuan Hao

作者单位: National Key Lab on High Power Semiconductor Lasers,Changchun University of Science and Technology,C Heping Campus of Jilin University, Changchun, Jilin, China 130062

会议类型: 国际会议

会议名称: 2012 International Conference on Optoelectronics and Microelectronics(2012光电子与微电子国际学术会议 2012 ICOM)

会议地点: 长春

会议语种:英文

页码: 128-132

在线出版日期: 2012-08-23（万方平台首次上网日期，不代表论文的发表时间）