Simulation and analysis of 980nm intracavitycontacted VCSEL

摘要：

In this paper, optical and electrical properties of the traditional and intracavity-contacted structures of 980nm VCSELs were simulated in the case of the same epitaxial growth by Crosslight PICS3D. Threshold current of the traditional structure device was 8.76mA and the one of intracavity-contacted structure device was 6.23mA. When operating current was 25 mA, the output power of the traditional structure device was 5.6mW and the one of intracavity-contacted structure device was 7mW. Compared with the traditional structure, the threshold current of intracavity-contacted structure device was reduced by 2.53mA, the output power was increased to 1.25 times, optical and electrical properties of the device were improved.

关键词： VCSEL intracavity-contacted structure threshold current output power

作者: Lingmin Wan Yuan Feng Peng Xu Guolie Jin Yingjie Zhao Yusi Zhao

作者单位: National Key Laboratory on High Power SemiconductorLasersChangchun University of Science and Technol Jilin Province Foreign Enterprises Service Co., LTD Changchun, China

会议类型: 国际会议

会议名称: 2012 International Conference on Optoelectronics and Microelectronics(2012光电子与微电子国际学术会议 2012 ICOM)

会议地点: 长春

会议语种:英文

页码: 133-135

在线出版日期: 2012-08-23（万方平台首次上网日期，不代表论文的发表时间）