The design of short wavelength light emitting diodes

摘要：

We demonstrate the structure from AlGaN-based multiple quantum well light emitting diodes at very short wavelength. Using software APSYS to simulate , 280nm wavelength can be achieved.

关键词： ultraviolet light source light emitting diodes AlGaN multiple quantum well software APSYS simulation

作者: Zhibin Zhao Qu Yi Li Te Yang Hao Yu Shuai Liu Lei Tian Chao-qun Wei Dong-han

作者单位: National Key Lab Of High Power Semiconductor Lasers, Changchun University Of Science And Technology, Changchun 130022, China

会议类型: 国际会议

会议名称: 2012 International Conference on Optoelectronics and Microelectronics(2012光电子与微电子国际学术会议 2012 ICOM)

会议地点: 长春

会议语种:英文

页码: 136-137

在线出版日期: 2012-08-23（万方平台首次上网日期，不代表论文的发表时间）