The Simulation analysis of GaInAsP/GaInP Diode Lasers Emitting at 808 nm

摘要：

The properties of the 808nm GaInAsP/GaInP quantum well structure lasers with asymmetric waveguide are numerically studied with a commercial LASTIP simulation program. The simulation results show that the laser performance of the 808nm GaInAsP/GaInP quantum well structure with asymmetric waveguide has a lower threshold current and higher slope efficiency, lower series resistance than symmetric waveguide the structure. Compared to symmetric structure, the lasers with asymmetric waveguide have a smaller band offset between waveguide and QW. These results indicate that a higher laser output power is obtained for the 808nmGaInAsP/GaInP quantum well structure with asymmetric waveguides.

关键词： semiconductor laser asymmetric waveguide GaInAsP/GaInP quantum well lastip simulate

作者: Kebin Gai Lin Li Jinlong Zhao Yong Wang Te Li Peng Lu Chang Su Zhanguo Li GuoJun Liu

作者单位: National Key Lab of High Power Semiconductor Lasers, ChangchunUniversity of Science and Technology Changchun 130022, China

会议类型: 国际会议

会议名称: 2012 International Conference on Optoelectronics and Microelectronics(2012光电子与微电子国际学术会议 2012 ICOM)

会议地点: 长春

会议语种:英文

页码: 138-141

在线出版日期: 2012-08-23（万方平台首次上网日期，不代表论文的发表时间）