Al 0.40 In 0.02 Ga 0.58 N based metal-semiconductor-metal photodiodes for ultraviolet detection
High crystalline quality Al0.40 In0.02Ga0.58N film has been achieved on GaN buffer by metalorganic vapor phase epitaxy (MOVPE). The metal-semiconductor-metal (MSM) structured visible blind photodetector was fabricated based on the Al0.40 In0.02Ga0.58N film. The current-voltage measurement indicated an obvious Schottky behavior, the barrier height was calculated to be 0.98 eV. With an applied bias of 10 V, the photodetector showed a peak responsivity of 0.065 A/W at 295 nm with a cutoff wavelength at 310 nm. Furthermore, the ultraviolet-visible rejection ratio (R295 nm/R450 nm) was more than two orders of magnitude at 10 V bias. It was also found another response peak at 360 nm corresponding to the band gap of GaN, Which proved our photodetector can be used for dual band detection in ultraviolet region. In addition, it was also found that the slower increased of the responsivity when the |bias| was above 3V was attributed to radiative and Auger recombination.
AlInGaN Ultraviolet photodection
Dongbo Wang Shujie Jiao Sujuan Sun Liancheng Zhao
Department of Information functional Materials and Quantum Devices, School of materials science and engineering, Harbin Institute of Technology, Harbin 150001, People’s Republic of China
国际会议
2012 International Conference on Optoelectronics and Microelectronics(2012光电子与微电子国际学术会议 2012 ICOM)
长春
英文
412-416
2012-08-23（万方平台首次上网日期，不代表论文的发表时间）