Characterization of DLC-Si Films Prepared by RF-PECVD

摘要：

Silicon-doped diamond-like carbon (DLC) films with a Si content from 6.30％ to 19.73％ were grown on Si substrate by radio frequency plasma-enhanced chemical vapour deposition (RF-PECVD). The influence of Si addition on the bonding structure, nanomechanical behaviour of the DLC films was investigated by Raman and X-ray photoelectron (XPS) spectroscopy, and Fourier transform infrared (FT-IR) spectroscopy. Silicon addition promoted the formation of sp3 bonding and reduced the hardness. The results show that the ratio of SiH4 in the gas mixture was successively varied to clarify its influence on the microstructure for the DLC films.

关键词： Diamond-like carbon film PECVD XPS Raman

作者: Jilong Tang Yong Wang

作者单位: National Key Laboratory on High Power Semiconductor Lasers, Changchun University of Science and Tech National Key Laboratory on High Power Semiconductor Lasers,Changchun University of Science and Techn

会议类型: 国际会议

会议名称: 2012 International Conference on Optoelectronics and Microelectronics(2012光电子与微电子国际学术会议 2012 ICOM)

会议地点: 长春

会议语种:英文

页码: 431-433

在线出版日期: 2012-08-23（万方平台首次上网日期，不代表论文的发表时间）