Photo-Electrochemical Etching of Macroporous Silicon Arrays Used in Silicon Microchannel Plates
The current-voltage curve of an n-type silicon wafer was presented in aqueous HF. The critical current density JPS was discussed. The control technology of channel dimension was studied and realized by changing the etching current density according to the JPS and dark current density. The pore morphology influenced by the working voltage were studied and analyzed. The dependence of macropore morphology on the orientation of n-type silicon was studied. The tilt channels array with smooth pore wall can be prepared by adopting the <118> orientation silicon wafer, and can satisfy the demand of microchannel plates for tilt angles of 7-15 degrees. A macroporous silicon arrays with the very high aspect ratio was prepared by the photo-electrochemical etching process.
current density macroporous silicon arrays photo-electrochemical etching microchannel plates
Guozheng Wang Zhenhua Jiang Yang Wang Cong Wang Jikai Yang Qingduo Duanmu
School of science Changchun University of Science and Technology Changchun, China
国际会议
2012 International Conference on Optoelectronics and Microelectronics(2012光电子与微电子国际学术会议 2012 ICOM)
长春
英文
486-489
2012-08-23(万方平台首次上网日期,不代表论文的发表时间)