Simulation Study of Single Event Effect for Different N-Well and Deep-N-Well Doping in 65nm Triple-Well CMOS Devices

摘要：

In this paper, single event effect (SEE) for different N-well and Deep N-well doping in triple-well process is studied by TCAD simulations. Charge collection in combinational circuits and charge sharing in SRAM cells are discussed in 65 nm triple-well CMOS technology. The results showed that devices with different doping have different ability of charge collection and charge sharing. Heavy ion strike induce single transistor Double-Pulses are observed, for the doping of 1×10 18 cm -3 and 5×10 18 cm -3 . Single event upset (SEU) recovery is also discussed for different doping in SRAM cells.

关键词： triple-well charge collection SEU recovery doping density DP(double pulse) TCAD

作者: Tianqi Wang Liyi Xiao Qingfeng Huang

作者单位: Micro-Electronics Center Harbin Institute of Technology Harbin, China

会议类型: 国际会议

会议名称: 2012 International Conference on Optoelectronics and Microelectronics(2012光电子与微电子国际学术会议 2012 ICOM)

会议地点: 长春

会议语种:英文

页码: 505-509

在线出版日期: 2012-08-23（万方平台首次上网日期，不代表论文的发表时间）