An improved fourth-order band-pass sigma-delta modulator with a novel resonator
This paper presents an improved full differential low-voltage fourth-order Ong-band-pass sigma-delta modulator (Ong-BPSDM, proposed by Adrian K. Ong firstly) using a novel resonator based on Salo architecture. Compared with the reported Ong-BPSDM, the proposed fourth-order Ong-BPSDM utilizing a novel double-sampling and double-delay resonator which only needs one op-amp has a better performance with a lower capacitive load and lower power consumption. The performance specifications of the blocks of BPSDM are confirmed by building the behavior model of the system scheme in the environment of Simulink. The circuits are simulated through TSMC0.18μm CMOS process. The modulator achieves a peak signal to noise ratio (SNR) 85.5dB and DR 87dB in the center frequency 20MHz for a 200 KHz bandwidth. The power consumption of the circuits is as low as 27 mW with a 1.8V supply.
bandpass sigma-delta modulator resonator
Xiaowei Liu Honglin Xu Jiajun Zhou Song Chen Jiang Yang
MEMS Center, Harbin Institute of Technology Harbin, China Key Laboratory of Micro-Systems and Micro- MEMS Center, Harbin Institute of TechnologyHarbin, China
国际会议
2012 International Conference on Optoelectronics and Microelectronics(2012光电子与微电子国际学术会议 2012 ICOM)
长春
英文
510-513
2012-08-23（万方平台首次上网日期，不代表论文的发表时间）