Analysis of LDMOS for Effect of Finger and Device-width on Gate Feedback Charge

摘要：

In this paper, we have simulated and analyzed the effect of fingers, device-width and main power supply (Vdd) on gate feedback charge (Qgd) and switching time of LDMOS by gate charge test circuit simulation. Gate feedback charge is the charge which is required to fill the gate-drain “Miller capacitance. Smaller area will have smaller charge and switching time. It has been seen in our simulation that gate feedback charge (Qgd) and switching time increased more linearly with device width rather than no. of fingers and main power supply (Vdd). We have successfully simulated that to improve the device’s power by increased the area, multi finger design is better than the width extension due to the lower gate feedback charge and faster switching time.

关键词： Gate Feedback Charge Switching time Number of Fingers Device-width Effects.

作者: Prima Sukma Permata Mohammed Sadique Anwar Md. Imran Siddiqui Shao-Ming Yang Jung-Ruey Tsai Gene Sheu

作者单位: Department of Computer Science and Information Engineering, Asia University, Taichung, Taiwan,China Department of Computer Science and Information Engineering, Asia University, Taichung, Taiwan, China

会议类型: 国际会议

会议名称: 2012 International Conference on Optoelectronics and Microelectronics(2012光电子与微电子国际学术会议 2012 ICOM)

会议地点: 长春

会议语种:英文

页码: 519-523

在线出版日期: 2012-08-23（万方平台首次上网日期，不代表论文的发表时间）