Effect of Ge Incorporation on Hydrogenated Amorphous Silicon Germanium Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition
Hydrogenated amorphous silicon germanium thin films (a-SiGe:H) were prepared via plasma enhanced chemical vapor deposition (PECVD). By adjusting the flow rate of GeH4, a-SiGe:H thin films with narrow bandgap (Eg) were fabricated with high Ge incorporation. It was found that although narrow Eg was obtained, high Ge incorporation resulted in a great reduction of the thin film photosensitivity. This degradation was attributed to the increase of polysilane-(SiH2)n, which indicated a loose and disordered microstructure, in the films by systematically investigating the optical, optoelectronic and microstructure properties of the prepared a-SiGe:H thin films via transmission, photo/dark conductivity, Raman spectroscopy, and Fourier transform infrared spectroscopy (FTIR) measurements. Such investigation provided a helpful guide for further preparing narrow Eg a-SiGe:H materials with good optoelectronic properties.
a-SiGe:H Bandgap adjustment Ge incorporation Photosensitivity PECVD
Baojun Yan Lei Zhao Bending Zhao Jingwei Chen Hongwei Diao Guanghong Wang Wenjing Wang
Key Laboratory of Solar Thermal Energy and Photovoltaic System of the Chinese Academy of Sciences, Institute of Electrical Engineering, The Chinese Academy of Sciences, Beijing 100190, China
国际会议
厦门
英文
27-30
2012-06-05（万方平台首次上网日期，不代表论文的发表时间）