Construction of high-quality p-type ZnSe nanowires/n-type Si heterojunctions and their nano-optoelectronic applications

摘要：

We report a simple and low-cost method for constructing high-quality p-type ZnSe nanowires/ntype Si heterojunction by growing p-type ZnSe:N nanowires on n-type Si substrate. The heterojunction shows excellent stability and reproducibility to white light irradiation with a fast response time (<0.1s) and a high Ilight/Idark ratio (>103). And the photovoltaic characteristics of it exhibit a fill factor of about 24％ and a high power conversion efficiency of 0.89％.

关键词： p-type ZnSe nanowires Heterojunction Photodetector Photovoltaic

作者: Min Lu Xingzhi Zhao Xiangan Wang Yongbin Ren Li Wang

作者单位: School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei Anhui 230009, P. R. China

会议类型: 国际会议

会议名称: 2012 International Conference on Advanced Materials Design and Machanics(2012先进材料设计与机械学国际会议 ICAMDM 2012)

会议地点: 厦门

会议语种:英文

页码: 31-34

在线出版日期: 2012-06-05（万方平台首次上网日期，不代表论文的发表时间）