Electrical Properties of InSbN Alloys Fabricated by Two-Step Ion Implantation

摘要：

We report the electrical properties of the InSbN alloys fabricated by two-step implantation of nitrogen ions into InSb wafers, characterized by Hall measurements. The alloy with higher implanted dose shows lower electron concentration due to the acceptor nature of nitrogen. At temperatures below 150 K., the electron concentration does not change and follows an exponential relation at above 200 K. The Hall mobility in all samples monotonically decreases with the increase of temperature, indicating the phonon dominating scattering mechanism. The annealing results reveal that annealing temperatures up to 598 K make the carrier concentration lower due to the reduction of donortype defects caused by ion implantation and the acceptor nature of nitrogen.

关键词： InSbN Alloys Hall Measurements Carrier Concentration Mobility

作者: Y. Wang D.H. Zhang Y. J. Jin X. Z. Chen J. H. Li

作者单位: School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 Changzhou University, Changzou, China

会议类型: 国际会议

会议名称: 2012 International Conference on Advanced Materials Design and Machanics(2012先进材料设计与机械学国际会议 ICAMDM 2012)

会议地点: 厦门

会议语种:英文

页码: 305-310

在线出版日期: 2012-06-05（万方平台首次上网日期，不代表论文的发表时间）