Improvement of Aomic Oxygen Resistance of Mylar films in Space Environment by AI Ion Implantation
The AO irradiation effect of Al ion implanted Mylar films in the ground-based AO simulation facility were investigated by scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS). The results of mass measurement shown that in initial stage of AO exposure the implanted sample had a small mass change, and then was stabilized. The erosion yield of the implanted polyimide film was 4.0*10-26cm3/atom and decreased by about two orders of magnitude compared with that of the Mylar film. The implanted sample surface showed a clear, smooth surface without any visual erosion features. The implanted Mylar fully restored their original color and the carbonization effect disappeared on the whole after AO exposure. The analysis through XPS indicates that a continuous high-quality protective oxide-based (AI2O3) surface layer was formed on the implanted polyimide films after the AO exposure. It can provide high-quality erosion protection for these materials.
atomic oxygen ion implantation Mylar erosion spacecraft materials
Zhao Liman Duo Shuwang Liu Tingzhi Song Mimi Peng Zhenjiang Zhang Jie
Jiangxi Key Laboratory of Surface Engineering Jiangxi Science & Technology Normal University Nanchan Department of Materials Science and Technology Jiangxi Science & Technology Normal University Nancha
国际会议
三峡
英文
2464-2467
2012-05-18（万方平台首次上网日期，不代表论文的发表时间）