Modeling of the nonuniform channel characteristic of a-Si:H thin film transistor under saturation mode bias temperature stress

摘要：

Understanding the importance of behavior of TFT characteristics under various electrical bias, in the paper, non-uniform channel characteristic of the aSi:H TFT caused by saturation mode Bias Temperature Stress (BTS) has been investigated. By assuming two exponential profiles of density of states within the band gap, a physical based model using a quasi-twodimensional approach has been derived. Parameter n has been introduced to the non-uniform distribution of the lateral electric field. Both the simulation and calculated results are finally verified with the experiment data. A good agreement is obtained. The work is helpful in understanding of drain bias dependence of threshold voltage stability of amorphous silicon TFTs.

关键词： amorphous silicon thin film transistor Bias Temperature Stress non-uniform channel

作者: Jian Qin Jian Qin R.H Yao Lei Qiang

作者单位: Department of Electronics and Electrical Engineering Guang Zhou University Guang Zhou, China School of Electronic and Information Engineering South China University of Technology Guang Zhou, Ch

会议类型: 国际会议

会议名称: 2012 International Conference on Electric Technology and Civil Engineering(2012 电子技术与土木工程国际会议 ICETCE 2012)

会议地点: 三峡

会议语种:英文

页码: 2513-2516

在线出版日期: 2012-05-18（万方平台首次上网日期，不代表论文的发表时间）