Diffusion Capacitance to directly characterize the interface states in a-Si:H/c-Si hpterojunctions
The theoretical diffusion capacitance is developed for the measurement to characterize directly interface states in a-Si:H/c-Si heterojunctions. The effects of the parameters of a-Si:H/c-Si heterojunction solar cells on the diffusion capacitance CD are discussed with the expression of the theoretical diffusion capacitance and numerical simulations. CD of a-Si:H/c-Si heterojunction with a aluminum back surface field (Al-BSF) decreases apparently with the interface defect density Dit. increasing above 1010 cm-2eV-1, and in turn the measurement based on the diffusion capacitance decrease is in turn very sensitive to Dit down to 1010 cm-2 eV-1. However, CD of a-Si:H/c-Si heterojunction without a Al-BSF decreases unconspicuously with Dit, and is sensitive to Dit down to 1010 cm-2eV-1. CD of a-Si:H/c-Si heterojunction with high impurity concentrations of the c-Si substrate decreases unconspicuously with Dit. As a consequence, interface states can be characterize more accurately in a-Si:H/c-Si heterojunctions with the Al-BSF contact and low impurit concentrations of the c-Si substrate by the diffusion capacitance.
a-Si:H/c-Si heterojunctions solar cells interface states diffusion capacitance
Chunliang Zhong Luoe Lan
dept. Electronics Science and Information Engineering Hunan University of Technology Zhuzhou, China
国际会议
三峡
英文
3127-3130
2012-05-18（万方平台首次上网日期，不代表论文的发表时间）