Improved Super Junction LDMOS Transistors on Thin Film SOI to suppress Substrate-assisted Depletion Effects

摘要：

Conventional super-junction lateral double diffused MOSFET(SJ-LDMOS) fabricated on Silicon on Insulator (SOI) substrate suffers from low breakdown voltage under the same on-resistance due to substrateassisted depletion effect To suppress this effect, three types of devices with optimized structures of SJ-LDMOS were simulated and fabricated on SOI. the improved breakdown voltage of structures increased 72％ and on-state-resistance decreased 87％ compared to conventional SJ device. Tbe device fabrication procedure is fully compatible with mainstream SOI CMOS process.

关键词： Superjunctiont LDMOS SOI substrate-assisted depletion effect

作者: Chao Xia Xinhong cheng Zhongjian Wang Duo Cao Tingting Jia YueHui YU

作者单位: Stale Key Laboratory of Functional Materials for Informatics , Shanghai Institute of Micro-system & Information Technology, Chinese Academy of Sciences Shanghai, China

会议类型: 国际会议

会议名称: 2012 International Conference on Electric Technology and Civil Engineering(2012 电子技术与土木工程国际会议 ICETCE 2012)

会议地点: 三峡

会议语种:英文

页码: 3228-3231

在线出版日期: 2012-05-18（万方平台首次上网日期，不代表论文的发表时间）