A X-Ray CMOS Image Sensor Based on Current Mirroring Integration Readout Circuit
An X-ray CMOS Image Sensor (CMI-X-IS) based on a current mirroring integration (CMI) readout circuit (ROIC) was developed. The photocurrent was mirrored and magnified in an integration capacitor out of the pixel. Its noise was suppressed by correlated double sampling circuit, and the video signal was exported by CMOS shift register and multiplexer and output stages. The quantitative analysis for CMI circuit design was implemented emphatically, and computer simulation of CMI was fulfilled. The 64 pixel-line-array image sensor was fabricated by 2μm CMOS process, and the performance parameters of CMI-X-IS were measured. The measurement results show that CMI-X-IS has the characteristics of acceptable non-uniformity, lower dark noise voltage, larger unit area responsiviry, higher output voltage and wider dynamic range. Applying this CMI-X-IS to an experiment system, the video signal waveform of target with different density and different size is obtained.
current mirroring integration readout circuit correlated double sampling circuit computer simulation performance parameters measurement video signal waveform
Wenpu ZHANG Yinsong PAN Liya MENG
Chongqing Key Laboratory of Emergency Communication in Chongqing Communication Institute Chongqing, Key Laboratory of the Ministry of Education: Laboratory of Optoelectronic Technology and System in C
国际会议
杭州
英文
592-595
2012-03-23（万方平台首次上网日期，不代表论文的发表时间）