The hydrogenic donor impurity binding energy of quantum dot in the presence of an electric field

摘要：

Using variational approach in the effective mass approximation,the hydrogenic donor impurity binding energy is investigated in detail in cylindrical GaAs/Ga1-xAlxAs quantum dot in the presence of an electric field applied along the growth direction of the quantum dot (QD). The binding energy increases gradually,reaches a maximum value,and then decreases quickly to the special value as the QD radius decreases. The results that the impurity binding energies as functions of the applied electric field and the position of a donor impurity ion are also presented.

关键词： quantum dot electric field hydrogenic donor impurity binding energy

作者: Guangxin Wang Xiuzhi Duan Wei Chen

作者单位: College of Science,Hebei United University Tangshan 063000,China College of Light Industry,Hebei United University Tangshan 063000,China

会议类型: 国际会议

会议名称: 2012 International Conference on Computer Science and Electronic Engineering(2012 IEEE计算机科学与电子工程国际会议 ICCSEE 2012)

会议地点: 杭州

会议语种:英文

页码: 23-26

在线出版日期: 2012-03-23（万方平台首次上网日期，不代表论文的发表时间）