Analysis of Material Science Problems in High-power LED Process

摘要：

This article explains the roles and material science problems of passivation layer,metal bonding,phosphor and Distributed Bragg Reflector in GaN-based LED device process,and introduces the methods and related processes to solve these problems from the view of material science.

关键词： Light Emitting Diode (LED) Compound Semiconductor Gallium Nitride (GaN) Passivation Layer Metal Bonding Phosphor Distributed Bragg Reflector (DBR)

作者: Yingyuan Zhou Shuzhi Li Weifeng Dai Yuesheng Li

作者单位: F5,No. 78,887 Zu Chong Zhi Road,Shanghai,P.R.China 311 Material Building,220 Han Dan Road,Shanghai,P.R.China

会议类型: 国际会议

会议名称: 2011 International Conference on Opto-Electronics Engineering and Information Science(2011光电电子工程与信息科学国际会议 ICOEIS 2011)

会议地点: 西安

会议语种:英文

页码: 716-720

在线出版日期: 2011-12-23（万方平台首次上网日期，不代表论文的发表时间）